Electrically driven germanium-tin vertical-cavity surface emitter
GeSn resonant-cavity-enhanced photodetectors on silicon-on-insulator platforms
IPH – Integrated Photonics » Direct Bandgap GeSn Alloys for Laser Application
Advanced GeSn/SiGeSn Group IV Heterostructure Lasers - von den Driesch - 2018 - Advanced Science - Wiley Online Library
An optically pumped 2.5 μm GeSn laser on Si operating at 110 K: Applied Physics Letters: Vol 109, No 17
GeSnOI mid-infrared laser technology | Light: Science & Applications
Nanomaterials | Free Full-Text | Review of Si-Based GeSn CVD Growth and Optoelectronic Applications | HTML
Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
Lasing in direct-bandgap GeSn alloy grown on Si | Nature Photonics
Frontiers | GeSn on Insulators (GeSnOI) Toward Mid-infrared Integrated Photonics
Demonstration of a continuous laser beam with germanium-tin alloy | Université Paris-Saclay
An optically pumped 2.5 μm GeSn laser on Si operating at 110 K: Applied Physics Letters: Vol 109, No 17
Materials | Free Full-Text | High-quality GeSn Layer with Sn Composition up to 7% Grown by Low-Temperature Magnetron Sputtering for Optoelectronic Application | HTML
Schematic structure of SiGeSn/GeSn based Transistor Laser Light | Download Scientific Diagram
GeSn-on-Insulator Stack Using Stressor Layers
The rise of the GeSn laser | Nature Photonics
Researchers demonstrate first electrically injected GeSn laser | Laser Focus World
An optically pumped 2.5 μm GeSn laser on Si operating at 110 K: Applied Physics Letters: Vol 109, No 17
Investigation of carrier confinement in direct bandgap GeSn/SiGeSn 2D and 0D heterostructures | Scientific Reports
Electrically injected GeSn lasers on Si operating up to 100 K
GeSn heterostructure micro-disk laser operating at 230 K
Optoelectronic applications of GeSn as a function of technology... | Download Scientific Diagram
